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IMBG120R220M1HXTMA1 Picture

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IMBG120R220M1HXTMA1

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In Stock:3,650(Ref. price)
Qty.Unit PriceExt. Price
1
$10.29980
$10.29980
Documents
Specifications
DescriptionDetails
Series
CoolSiC™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1.2 kV
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
294mOhm @ 4A, 18V
Vgs(th) (Max) @ Id
5.7V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs
9.4 nC @ 18 V
Vgs (Max)
+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds
312 pF @ 800 V
FET Feature
Standard
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-12
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Other
Price advantage, IMBG120R220M1HXTMA1 is available in stock and can be delivered on the same day
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