NTTFS1D2N02P1E Details_NTTFS1D2N02P1E PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1mOhm @ 38A, 10V
Vgs(th) (Max) @ Id	2V @ 934µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 4.5 V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	4040 pF @ 13 V
FET Feature	-
Power Dissipation (Max)	820mW (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (3.3x3.3)
Package / Case	8-PowerWDFN

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