APT20M19JVR Details_APT20M19JVR PDF Document_Microsemi Corporation-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	POWER MOS V®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	112A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	19mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	495 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	11640 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	500W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	ISOTOP®
Package / Case	SOT-227-4, miniBLOC

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