NTR5198NLT1G Details_NTR5198NLT1G PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	155mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.8 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	182 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

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