FJ3303010L Details_FJ3303010L PDF Document_Panasonic Electronic Components-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4V
Rds On (Max) @ Id, Vgs	7Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id	1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	12 pF @ 3 V
FET Feature	-
Power Dissipation (Max)	100mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SSSMini3-F2-B
Package / Case	SOT-723

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