VN0109N3-G Details_VN0109N3-G PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：4,947(Ref. price)

Qty.	Unit Price	Ext. Price
1	$0.68600	$0.68600

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	90 V
Current - Continuous Drain (Id) @ 25°C	350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	65 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)

Other

Price advantage, VN0109N3-G is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
NTK3043NT1G	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 20V 210MA SOT723	$0.36630	In Stock:2008
IPI111N15N3GAKSA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 150V 83A TO262-3	$2.67552	In Stock:18870
IRLL2705TR	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 55V 3.8A SOT223	No price	In Stock:18872
TK160F10N1L,LQ	Toshiba Semiconductor and Storage	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 160A TO220SM	$1.44743	In Stock:18874
AUIRFSL3206	International Rectifier	MOSFETs - Single	Datasheet	AUTOMOTIVE HEXFET N CHANNEL	$1.71270	In Stock:18876