BSH103BKR Details_BSH103BKR PDF Document_Nexperia USA Inc.-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchMOS™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	270mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.2 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	79.3 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	330mW (Ta), 2.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3

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