UF3SC120009K4S Details_UF3SC120009K4S PDF Document

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	11mOhm @ 100A, 12V
Vgs(th) (Max) @ Id	6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	234 nC @ 15 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8512 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	789W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4

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