TPH3208PS Details_TPH3208PS PDF Document_Transphorm-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id	2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 8 V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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