RJK1557DPA-WS#J0 Details_RJK1557DPA-WS#J0 PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	58mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1250 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	8-WPAK
Package / Case	8-PowerWDFN

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