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SI1414DH-T1-GE3 Picture

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SI1414DH-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 30V 4A SOT-363
  • Datasheet download
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In Stock:18,886(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
46mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-363
Package / Case
6-TSSOP, SC-88, SOT-363
Other
Price advantage, SI1414DH-T1-GE3 is available in stock and can be delivered on the same day
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