FDB8444TS Details_FDB8444TS PDF Document_Fairchild Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	PowerTrench®
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5mOhm @ 70A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	338 nC @ 20 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8.41 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	181W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-5
Package / Case	TO-263-5, D²Pak (4 Leads + Tab), TO-263BB

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