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MOSFETs - Single
TSM1NB60SCT B0G Picture

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TSM1NB60SCT B0G

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In Stock:20,706(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
138 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Other
Price advantage, TSM1NB60SCT B0G is available in stock and can be delivered on the same day
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