NP161N04TUG-E1-AY Details_NP161N04TUG-E1-AY PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	1.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	345 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	20.25 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 250W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)

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