IRF6614 Details_IRF6614 PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	12.7A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.3mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2560 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 42W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ ST
Package / Case	DirectFET™ Isometric ST

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