NVJS3151PT1G Details_NVJS3151PT1G PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	60mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	8.6 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	625mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-88/SC70-6/SOT-363
Package / Case	6-TSSOP, SC-88, SOT-363

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