62-0136PBF Details_62-0136PBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	19A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3710 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.5W
Operating Temperature	-55°C ~ 150°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	-
Package / Case	-

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