RJK0603DPN-A0#T2 Details_RJK0603DPN-A0#T2 PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.2mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4150 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	125W (Ta)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220ABA
Package / Case	TO-220-3

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