3LN01C-TB-H Details_3LN01C-TB-H PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4V
Rds On (Max) @ Id, Vgs	3.7Ohm @ 80mA, 4V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	1.58 nC @ 10 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	7 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	250mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-CP
Package / Case	TO-236-3, SC-59, SOT-23-3

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