2SK3670(F,M) Details_2SK3670(F,M) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	*
Package	Bulk
FET Type	-
Technology	-
Drain to Source Voltage (Vdss)	-
Current - Continuous Drain (Id) @ 25°C	670mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-92MOD
Package / Case	TO-226-3, TO-92-3 Long Body

Other

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