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MOSFETs - Single
HUF75852G3 Picture

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HUF75852G3

  • ON Semiconductor
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  • POWER FIELD-EFFECT TRANSISTOR, 7
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In Stock:15,212(Ref. price)
Qty.Unit PriceExt. Price
1
$5.44320
$5.44320
Documents
Specifications
DescriptionDetails
Series
UltraFET™
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
480 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7.69 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Other
Price advantage, HUF75852G3 is available in stock and can be delivered on the same day
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