IPL65R310E6AUMA1 Details_IPL65R310E6AUMA1 PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	CoolMOS™ E6
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	310mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	950 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Thin-Pak (8x8)
Package / Case	4-PowerTSFN

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