RQ3E130MNTB1 Details_RQ3E130MNTB1 PDF Document_Rohm Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.1mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	840 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSMT (3.2x3)
Package / Case	8-PowerVDFN

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