LP0701LG-G Details_LP0701LG-G PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	16.5 V
Current - Continuous Drain (Id) @ 25°C	700mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	2V, 5V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 300mA, 5V
Vgs(th) (Max) @ Id	1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)

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