STU10P6F6 Details_STU10P6F6 PDF Document_STMicroelectronics-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	DeepGATE™, STripFET™ VI
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	340 pF @ 48 V
FET Feature	-
Power Dissipation (Max)	35W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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