TPS1100DR Details_TPS1100DR PDF Document_Texas Instruments-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	15 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 10V
Rds On (Max) @ Id, Vgs	180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.45 nC @ 10 V
Vgs (Max)	+2V, -15V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	791mW (Ta)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)

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