IRF7842PBF Details_IRF7842PBF PDF Document_International Rectifier-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4.5 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

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