RM4P20ES6 Details_RM4P20ES6 PDF Document_Rectron USA-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	3A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	52mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 4 V
FET Feature	-
Power Dissipation (Max)	1.7W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-6
Package / Case	SOT-23-6

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