IRF7451PBF Details_IRF7451PBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,842(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	990 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

Other

Price advantage, IRF7451PBF is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FQPF33N10	Fairchild Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 18A TO220F	$0.63360	In Stock:3544
2N7002KT1G	ON Semiconductor	MOSFETs - Single	Datasheet	SMALL SIGNAL FIELD-EFFECT TRANSI	$0.01920	In Stock:19231
IRF3709	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 90A TO220AB	No price	In Stock:19233
IRF9520NPBF	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET P-CH 100V 6.8A TO220AB	$1.19790	In Stock:5247
APT28M120L	Microchip Technology	MOSFETs - Single	Datasheet	MOSFET N-CH 1200V 29A TO264	$17.27100	In Stock:19241