PMZ320UPEYL Details_PMZ320UPEYL PDF Document_Nexperia USA Inc.-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	510mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.4 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	122 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	350mW (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1006-3
Package / Case	SC-101, SOT-883

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