TSM126CX RFG Details_TSM126CX RFG PDF Document_Taiwan Semiconductor Corporation-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	30mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	0V, 10V
Rds On (Max) @ Id, Vgs	800Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id	1V @ 8µA
Gate Charge (Qg) (Max) @ Vgs	1.18 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	51.42 pF @ 25 V
FET Feature	Depletion Mode
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

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