XP231P02013R-G Details_XP231P02013R-G PDF Document_Torex Semiconductor Ltd-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	34 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	350mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-323-3
Package / Case	SC-70, SOT-323

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