CMPDM202PH BK Details_CMPDM202PH BK PDF Document_Central Semiconductor Corp-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 5V
Rds On (Max) @ Id, Vgs	88mOhm @ 1.2A, 5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 5 V
Vgs (Max)	12V
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	350mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23F
Package / Case	SOT-23-3 Flat Leads

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