FF401R17KF6C_B2 Details_FF401R17KF6C_B2 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,530(Ref. price)

Qty.	Unit Price	Ext. Price
1	$1077.75108	$1077.75108

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	2 Independent
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	650 A
Power - Max	3150 W
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 400A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	27 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 125°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, FF401R17KF6C_B2 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
APTGL475SK120D3G	Microchip Technology	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 610A 2080W D3	$184.72750	In Stock:17068
FS25R12W1T4B11BOMA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 45A 205W	$37.33530	In Stock:215
FF800R17KE3NOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1700V 4450W	$1082.64610	In Stock:17078
FP75R07N2E4BOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 650V 95A	$93.24	In Stock:17088
FDDF80R12W1H3B52BOMA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE	$26.22950	In Stock:900