APTGT50A120D1G Details_APTGT50A120D1G PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench Field Stop
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	75 A
Power - Max	270 W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	3.6 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	D1
Supplier Device Package	D1

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