APT45GP120JDQ2 Details_APT45GP120JDQ2 PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	POWER MOS 7®
Package	Tube
IGBT Type	PT
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	75 A
Power - Max	329 W
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 45A
Current - Collector Cutoff (Max)	750 µA
Input Capacitance (Cies) @ Vce	4 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Supplier Device Package	ISOTOP®

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