MII200-12A4 Details_MII200-12A4 PDF Document

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Box
IGBT Type	NPT
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	270 A
Power - Max	1130 W
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 150A
Current - Collector Cutoff (Max)	10 mA
Input Capacitance (Cies) @ Vce	11 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Y3-DCB
Supplier Device Package	Y3-DCB

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