F475R07W2H3B51BOMA1 Details_F475R07W2H3B51BOMA1 PDF Document

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	-
Configuration	Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	75 A
Power - Max	520 W
Vce(on) (Max) @ Vge, Ic	1.55V @ 15V, 37.5A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	4.7 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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