APTGT150A120G Details_APTGT150A120G PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench Field Stop
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	220 A
Power - Max	690 W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 150A
Current - Collector Cutoff (Max)	350 µA
Input Capacitance (Cies) @ Vce	10.7 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	SP6
Supplier Device Package	SP6

Other

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