FMG2G75US60 Details_FMG2G75US60 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	75 A
Power - Max	310 W
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 75A
Current - Collector Cutoff (Max)	250 µA
Input Capacitance (Cies) @ Vce	7.056 nF @ 30 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	7PM-GA
Supplier Device Package	7PM-GA

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