NTE3300 Details_NTE3300 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bag
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	400 V
Current - Collector (Ic) (Max)	10 A
Current - Collector Pulsed (Icm)	130 A
Vce(on) (Max) @ Vge, Ic	8V @ 20V, 130A
Power - Max	30 W
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	150ns/450ns
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220 Full Pack

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