STGWT40H65FB Details_STGWT40H65FB PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	160 A
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 40A
Power - Max	283 W
Switching Energy	498mJ (on), 363mJ (off)
Input Type	Standard
Gate Charge	210 nC
Td (on/off) @ 25°C	40ns/142ns
Test Condition	400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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