RGT20NL65GTL Details_RGT20NL65GTL PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	30 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 10A
Power - Max	106 W
Switching Energy	-
Input Type	Standard
Gate Charge	22 nC
Td (on/off) @ 25°C	12ns/32ns
Test Condition	400V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB

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