IRG7PH35UD-EP Details_IRG7PH35UD-EP PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,410(Ref. price)

Qty.	Unit Price	Ext. Price
1	$6.07933	$6.07933

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 20A
Power - Max	180 W
Switching Energy	1.06mJ (on), 620µJ (off)
Input Type	Standard
Gate Charge	85 nC
Td (on/off) @ 25°C	30ns/160ns
Test Condition	600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)	105 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD

Other

Price advantage, IRG7PH35UD-EP is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IXYP30N65B3D1	IXYS	Transistors - IGBTs - Single	Datasheet	IGBT 650V 30A TO220	No price	In Stock:19262
92-0235	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IGBT 430V 20A 125W TO220AB	No price	In Stock:19266
AIGB15N65F5ATMA1	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	DISCRETE SWITCHES	$3.18250	In Stock:19268
RGPR30NS40HRTL	Rohm Semiconductor	Transistors - IGBTs - Single	Datasheet	400V 30A IGNITION IGBT	$1.57700	In Stock:3160
AIKB30N65DF5ATMA1	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IC DISCRETE 650V TO263-3	$4.65600	In Stock:4392