APT50GP60B2DQ2G Details_APT50GP60B2DQ2G PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	POWER MOS 7®
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	150 A
Current - Collector Pulsed (Icm)	190 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 50A
Power - Max	625 W
Switching Energy	465µJ (on), 635µJ (off)
Input Type	Standard
Gate Charge	165 nC
Td (on/off) @ 25°C	19ns/85ns
Test Condition	400V, 50A, 4.3Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	-

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