IRG4PC50UD-EPBF Details_IRG4PC50UD-EPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	55 A
Current - Collector Pulsed (Icm)	220 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 27A
Power - Max	200 W
Switching Energy	990µJ (on), 590µJ (off)
Input Type	Standard
Gate Charge	180 nC
Td (on/off) @ 25°C	46ns/140ns
Test Condition	480V, 27A, 5Ohm, 15V
Reverse Recovery Time (trr)	50 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AC

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