APT45GP120B2DQ2G Details_APT45GP120B2DQ2G PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	POWER MOS 7®
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	113 A
Current - Collector Pulsed (Icm)	170 A
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 45A
Power - Max	625 W
Switching Energy	900µJ (on), 905µJ (off)
Input Type	Standard
Gate Charge	185 nC
Td (on/off) @ 25°C	18ns/100ns
Test Condition	600V, 45A, 5Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	-

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