STGP7H60DF Details_STGP7H60DF PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	14 A
Current - Collector Pulsed (Icm)	28 A
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 7A
Power - Max	88 W
Switching Energy	99µJ (on), 100µJ (off)
Input Type	Standard
Gate Charge	46 nC
Td (on/off) @ 25°C	30ns/160ns
Test Condition	400V, 7A, 47Ohm, 15V
Reverse Recovery Time (trr)	136 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220

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