HGT1S2N120CN Details_HGT1S2N120CN PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,742(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	13 A
Current - Collector Pulsed (Icm)	20 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 2.6A
Power - Max	104 W
Switching Energy	96µJ (on), 355µJ (off)
Input Type	Standard
Gate Charge	30 nC
Td (on/off) @ 25°C	25ns/205ns
Test Condition	960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	TO-262

Other

Price advantage, HGT1S2N120CN is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IRG7PH50K10DPBF	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IGBT 1200V 90A 400W TO247AC	No price	In Stock:17818
NGB8206ANT4G	ON Semiconductor	Transistors - IGBTs - Single	Datasheet	IGBT, 20A, 390V, N-CHANNEL	$0.64990	In Stock:39960
IGC99T120T8RQX7SA1	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IGBT 1200V 100A DIE	No price	In Stock:17822
AUIRGP65G40D0	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IGBT 600V 62A 625W TO247	No price	In Stock:17824
SIGC25T60NCX7SA1	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IGBT 3 CHIP 600V WAFER	No price	In Stock:17826