HGTG20N60C3D Details_HGTG20N60C3D PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	45 A
Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 20A
Power - Max	164 W
Switching Energy	500µJ (on), 500µJ (off)
Input Type	Standard
Gate Charge	91 nC
Td (on/off) @ 25°C	28ns/151ns
Test Condition	480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)	55 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

Other

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